Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK1340-E
RFQ
VIEW
RFQ
3,197
In-stock
Renesas Electronics America MOSFET N-CH 900V 5A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel - 900V 5A (Ta) 4 Ohm @ 3A, 10V - - 740pF @ 10V 10V ±30V
AUIRLL024Z
RFQ
VIEW
RFQ
2,443
In-stock
Infineon Technologies MOSFET NCH 55V 5A SOT223 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 5A (Ta) 60 mOhm @ 3A, 10V 3V @ 250µA 11nC @ 5V 380pF @ 25V 4.5V, 10V ±16V
RJK6006DPP-E0#T2
RFQ
VIEW
RFQ
1,988
In-stock
Renesas Electronics America MOSFET N-CH 600V 5A TO220 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 29W (Tc) N-Channel - 600V 5A (Ta) 1.6 Ohm @ 2.5A, 10V - 19nC @ 10V 600pF @ 25V 10V ±30V
RJK5030DPP-M0#T2
RFQ
VIEW
RFQ
2,143
In-stock
Renesas Electronics America MOSFET N-CH 500V 5A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 28.5W (Tc) N-Channel - 500V 5A (Ta) 1.6 Ohm @ 2A, 10V - 13nC @ 10V 550pF @ 25V 10V ±30V
TK5A55D(STA4,Q,M)
RFQ
VIEW
RFQ
3,671
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 550V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 550V 5A (Ta) 1.7 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V
TK5A53D(STA4,Q,M)
RFQ
VIEW
RFQ
2,952
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 525V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 525V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V
TK5A50D(STA4,Q,M)
RFQ
VIEW
RFQ
2,292
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 500V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
IRFR220NCPBF
RFQ
VIEW
RFQ
1,272
In-stock
Infineon Technologies MOSFET N-CH 200V 5A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 43W (Tc) N-Channel - 200V 5A (Ta) 600 mOhm @ 2.9A, 10V 4V @ 250µA 23nC @ 10V 300pF @ 25V 10V ±20V
2SK3565(Q,M)
RFQ
VIEW
RFQ
1,767
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 900V 5A (Ta) 2.5 Ohm @ 3A, 10V 4V @ 1mA 28nC @ 10V 1150pF @ 25V 10V ±30V
TK5A65D(STA4,Q,M)
RFQ
VIEW
RFQ
1,016
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 650V 5A (Ta) 1.43 Ohm @ 2.5A, 10V 4V @ 1mA 16nC @ 10V 800pF @ 25V 10V ±30V
TK5A60D(STA4,Q,M)
RFQ
VIEW
RFQ
2,879
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 600V 5A (Ta) 1.43 Ohm @ 2.5A, 10V 4.4V @ 1mA 16nC @ 10V 700pF @ 25V 10V ±30V