- Manufacture :
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- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,172
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 22A T-MAX | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 690W (Tc) | N-Channel | 1200V | 22A (Tc) | 570 mOhm @ 11A, 10V | 5V @ 2.5mA | 185nC @ 10V | 5155pF @ 25V | 10V | ±30V | ||||
VIEW |
3,721
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 22A TO-264 | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 690W (Tc) | N-Channel | 1200V | 22A (Tc) | 570 mOhm @ 11A, 10V | 5V @ 2.5mA | 185nC @ 10V | 5155pF @ 25V | 10V | ±30V | ||||
VIEW |
1,872
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V |