- Manufacture :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 100 mOhm @ 10A (1)
- 104 mOhm @ 10A, 18V (1)
- 117 mOhm @ 10A, 18V (2)
- 120 mOhm @ 10A (1)
- 140 mOhm @ 10A (1)
- 208 mOhm @ 5A, 18V (1)
- 208 mOhm @ 7A, 18V (1)
- 220 mOhm @ 6A (1)
- 25 mOhm @ 50A (1)
- 280 mOhm @ 5A (1)
- 364 mOhm @ 4A, 18V (1)
- 39 mOhm @ 27A, 18V (1)
- 460 mOhm @ 3A (1)
- 52 mOhm @ 20A, 18V (1)
- 585 mOhm @ 3A, 18V (1)
- 60 mOhm @ 20A (1)
- 70 mOhm @ 20A (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
19 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
2,973
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | - | 1200V | 20A (Tc) | 70 mOhm @ 20A | - | - | - | - | - | ||||
VIEW |
2,727
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | - | 1200V | 10A (Tc) | 140 mOhm @ 10A | - | - | - | - | - | ||||
VIEW |
3,666
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 5A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | - | 1200V | 5A (Tc) | 280 mOhm @ 5A | - | - | - | - | - | ||||
VIEW |
1,525
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 6A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | - | - | 1200V | 6A (Tc) (90°C) | 220 mOhm @ 6A | - | - | - | - | - | ||||
VIEW |
1,365
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 3A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 15W (Tc) | - | 1200V | 3A (Tc) (95°C) | 460 mOhm @ 3A | - | - | - | - | - | ||||
VIEW |
864
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 25A TO263-7 | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 170W (Tc) | - | 1200V | 25A (Tc) | 100 mOhm @ 10A | - | - | 1403pF @ 800V | - | - | ||||
VIEW |
1,152
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 72A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | 1200V | 72A (Tc) | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | 2222pF @ 800V | 18V | +22V, -4V | ||||
VIEW |
2,630
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | ||||
VIEW |
2,729
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 55A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | 1200V | 55A (Tc) | 52 mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | 1337pF @ 800V | 18V | +22V, -4V | ||||
VIEW |
2,045
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 14A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 108W (Tc) | N-Channel | 1200V | 14A (Tc) | 364 mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | 18V | +22V, -6V | ||||
VIEW |
2,545
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | ||||
VIEW |
1,359
In-stock
|
Rohm Semiconductor | MOSFET NCH 1.2KV 17A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 103W (Tc) | N-Channel | 1200V | 17A (Tc) | 208 mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | 398pF @ 800V | 18V | +22V, -4V | ||||
VIEW |
690
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | ||||
VIEW |
961
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.2KV 50A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 583W (Tc) | - | 1200V | 100A (Tc) | 25 mOhm @ 50A | - | - | 7209pF @ 800V | - | - | ||||
VIEW |
1,872
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | ||||
VIEW |
1,775
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V | ||||
VIEW |
3,749
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 45A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 282W (Tc) | - | 1200V | 45A (Tc) | 60 mOhm @ 20A | - | - | 3091pF @ 800V | - | - | ||||
VIEW |
2,059
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 25A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | - | - | 170W (Tc) | - | 1200V | 25A (Tc) | 120 mOhm @ 10A | - | - | 1403pF @ 800V | - | - | ||||
VIEW |
1,316
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1200V 15A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK (7-Lead) | 106W (Tc) | - | 1200V | 15A (Tc) | - | - | - | - | - | - |