- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,916
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1700V 16A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | - | - | 1700V | 16A (Tc) (90°C) | 110 mOhm @ 16A | - | - | - | - | - | |||
|
VIEW |
2,440
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
|
VIEW |
3,389
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 65W (Tc) | N-Channel | - | 1700V | 5A (Tc) | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | 249pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
1,223
In-stock
|
Cree/Wolfspeed | MOSFET NCH 1.7KV 72A TO247 | C2M™ | Active | Tube | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 520W (Tc) | N-Channel | - | 1700V | 72A (Tc) | 70 mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | 20V | +25V, -10V | |||
|
VIEW |
3,980
In-stock
|
IXYS | MOSFET N-CH 1700V 2A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 568W (Tc) | N-Channel | Depletion Mode | 1700V | 2A (Tj) | 6.5 Ohm @ 1A, 0V | - | 110nC @ 5V | 3650pF @ 25V | - | ±20V | |||
|
VIEW |
2,000
In-stock
|
Rohm Semiconductor | MOSFET N-CH 1700V 3.7A | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 35W (Tc) | N-Channel | - | 1700V | 3.7A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V | |||
|
VIEW |
2,972
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1700V 4.9A TO247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 69W (Tc) | N-Channel | - | 1700V | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
3,444
In-stock
|
STMicroelectronics | MOSFET N-CH 1700V 2.6A TO247-3 | PowerMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 160mW | N-Channel | - | 1700V | 2.6A (Tc) | 13 Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,742
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | - | Not For New Designs | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1700V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | |||
|
VIEW |
3,608
In-stock
|
IXYS | MOSFET N-CH 1700V 2A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 568W (Tc) | N-Channel | Depletion Mode | 1700V | 2A (Tj) | 6.5 Ohm @ 1A, 0V | - | 110nC @ 5V | 3650pF @ 10V | 0V | ±20V | |||
|
VIEW |
3,193
In-stock
|
IXYS | MOSFET N-CH 1700V 1A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 290W (Tc) | N-Channel | Depletion Mode | 1700V | 1A (Tc) | 16 Ohm @ 500mA, 0V | - | 47nC @ 5V | 3090pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,501
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | - | - | 1700V | 4A (Tc) (95°C) | 480 mOhm @ 4A | - | - | - | - | - | |||
|
VIEW |
3,295
In-stock
|
GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 48W (Tc) | - | - | 1700V | 8A (Tc) (90°C) | 250 mOhm @ 8A | - | - | - | - | - | |||
|
VIEW |
1,735
In-stock
|
ON Semiconductor | MOSFET N-CH 1700V 2.5A | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 3W (Ta), 55W (Tc) | N-Channel | - | 1700V | 2.5A (Tc) | 10.5 Ohm @ 1.5A, 10V | - | 48nC @ 10V | 850pF @ 30V | 10V | ±30V | |||
|
VIEW |
3,192
In-stock
|
STMicroelectronics | MOSFET N-CH 1700V 2.6A | PowerMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 63W (Tc) | N-Channel | - | 1700V | 2.6A (Tc) | 13 Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | 10V | ±30V |