Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPP15P10PGHKSA1
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VIEW
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643
In-stock
Infineon Technologies MOSFET P-CH 100V 15A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 128W (Tc) P-Channel - 100V 15A (Tc) 240 mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48nC @ 10V 1280pF @ 25V 10V ±20V
SPU30P06P
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2,415
In-stock
Infineon Technologies MOSFET P-CH 60V 30A IPAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 125W (Tc) P-Channel - 60V 30A (Tc) 75 mOhm @ 21.5A, 10V 4V @ 1.7mA 48nC @ 10V 1535pF @ 25V 10V ±20V
2SJ380(F)
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RFQ
2,951
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 100V 12A TO220NIS - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 35W (Tc) P-Channel - 100V 12A (Ta) 210 mOhm @ 6A, 10V 2V @ 1mA 48nC @ 10V 1100pF @ 10V 4V, 10V ±20V
SPP15P10PHXKSA1
RFQ
VIEW
RFQ
3,311
In-stock
Infineon Technologies MOSFET P-CH 100V 15A TO220-3 SIPMOS® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 128W (Tc) P-Channel - 100V 15A (Tc) 240 mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48nC @ 10V 1280pF @ 25V 10V ±20V
IXTP15P15T
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VIEW
RFQ
2,357
In-stock
IXYS MOSFET P-CH 150V 15A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) P-Channel - 150V 15A (Tc) 240 mOhm @ 7A, 10V 4.5V @ 250µA 48nC @ 10V 3650pF @ 25V 10V ±15V