- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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19 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,875
In-stock
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ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,032
In-stock
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ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,212
In-stock
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ON Semiconductor | MOSFET P-CH 60V 9.7A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 49W (Tc) | P-Channel | - | 60V | 9.7A (Tc) | 280 mOhm @ 4.9A, 10V | 4V @ 250µA | 19nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,399
In-stock
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Infineon Technologies | MOSFET P-CH 55V 9.5A TO-220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 29W (Tc) | P-Channel | - | 55V | 9.5A (Tc) | 175 mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,736
In-stock
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Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,165
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
897
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 37W (Tc) | P-Channel | - | 60V | 8.5A (Tc) | 280 mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,699
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,609
In-stock
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Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
891
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,793
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,912
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
968
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,989
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 37W (Tc) | P-Channel | - | 60V | 8.5A (Tc) | 280 mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,686
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
744
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,790
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,486
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,963
In-stock
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Infineon Technologies | MOSFET P-CH 55V 12A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |