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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,049
In-stock
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STMicroelectronics | MOSFET P-CH 60V 10A IPAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 35W (Tc) | P-Channel | - | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | |||
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VIEW |
941
In-stock
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Infineon Technologies | MOSFET P-CH 60V 5.1A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 2.5W (Ta), 25W (Tc) | P-Channel | - | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
