Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9610
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VIEW
RFQ
681
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
STF10P6F6
RFQ
VIEW
RFQ
2,175
In-stock
STMicroelectronics MOSFET P-CH 60V 10A TO-220FP DeepGATE™, STripFET™ VI Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) P-Channel 60V 10A (Tc) 160 mOhm @ 5A, 10V 4V @ 250µA 6.4nC @ 10V 340pF @ 48V 10V ±20V
TSM680P06CH X0G
RFQ
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RFQ
3,233
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 18A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 20W (Tc) P-Channel 60V 18A (Tc) 68 mOhm @ 6A, 10V 2.2V @ 250µA 16.4nC @ 10V 870pF @ 30V 4.5V, 10V ±20V
IRF9610PBF
RFQ
VIEW
RFQ
1,885
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V