- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,815
In-stock
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Infineon Technologies | MOSFET P-CH 30V 100A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 200W (Tc) | P-Channel | - | 30V | 100A (Tc) | 4.3 mOhm @ 80A, 10V | 2.1V @ 475µA | 200nC @ 10V | 9300pF @ 25V | 4.5V, 10V | +5V, -16V | |||
|
VIEW |
923
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 200W (Tc) | P-Channel | - | 30V | 100A (Tc) | 4.3 mOhm @ 80A, 10V | 2.1V @ 475µA | 200nC @ 10V | 9300pF @ 25V | 4.5V, 10V | +5V, -16V | |||
|
VIEW |
3,024
In-stock
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Infineon Technologies | MOSFET P-CH 55V 74A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262 | 200W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,658
In-stock
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Infineon Technologies | MOSFET P-CH 55V 74A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,806
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,925
In-stock
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Infineon Technologies | MOSFET P-CH 55V 74A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
