Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOT25S65L
RFQ
VIEW
RFQ
3,298
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 25A TO220 aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 357W (Tc) N-Channel - 650V 25A (Tc) 190 mOhm @ 12.5A, 10V 4V @ 250µA 26.4nC @ 10V 1278pF @ 100V 10V ±30V
NDP603AL
RFQ
VIEW
RFQ
2,741
In-stock
ON Semiconductor MOSFET N-CH 30V 25A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 50W (Tc) N-Channel - 30V 25A (Tc) 22 mOhm @ 25A, 10V 3V @ 250µA 40nC @ 10V 1100pF @ 15V 4.5V, 10V ±20V
FCP25N60N
RFQ
VIEW
RFQ
683
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SupreMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 216W (Tc) N-Channel - 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 10V ±30V
FCP25N60N-F102
RFQ
VIEW
RFQ
735
In-stock
ON Semiconductor MOSFET N-CH 600V 25A TO220-3 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 216W (Tc) N-Channel - 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 10V ±30V
STP25N10F7
RFQ
VIEW
RFQ
605
In-stock
STMicroelectronics MOSFET N-CH 100V 25A TO-220 DeepGATE™, STripFET™ VII Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 50W (Tc) N-Channel - 100V 25A (Tc) 35 mOhm @ 12.5A, 10V 4.5V @ 250µA 14nC @ 10V 920pF @ 50V 10V ±20V