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- FET Type :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,576
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.4A 8SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 20V | 5.4A (Ta) | 60 mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
1,949
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 5.3A (Ta) | 62 mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
1,880
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.4A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | P-Channel | - | 20V | 5.4A (Tc) | 60 mOhm @ 5.4A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
2,432
In-stock
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Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 5.3A (Ta) | 62 mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
3,165
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 5.4A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | P-Channel | - | 20V | 5.4A (Tc) | 60 mOhm @ 5.4A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
1,884
In-stock
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Infineon Technologies | MOSFET N-CH 30V 43A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,985
In-stock
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Infineon Technologies | MOSFET N-CH 30V 43A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V |