- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,607
In-stock
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NXP USA Inc. | MOSFET N-CH 40V 75A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 254W (Tc) | N-Channel | - | 40V | 75A (Tc) | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 69nC @ 10V | 4824pF @ 25V | 10V | ±20V | ||||
VIEW |
653
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | ||||
VIEW |
749
In-stock
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Infineon Technologies | MOSFET N-CH 60V 56A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||||
VIEW |
1,154
In-stock
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Infineon Technologies | MOSFET N-CH 60V 79A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 110W (Tc) | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||||
VIEW |
885
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | ||||
VIEW |
1,233
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-263-7 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-7 (IXTA..7) | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | ||||
VIEW |
2,394
In-stock
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IXYS | MOSFET N-CH 85V 88A TO-263 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 230W (Tc) | N-Channel | - | 85V | 88A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 100µA | 69nC @ 10V | 3140pF @ 25V | 10V | ±20V | ||||
VIEW |
680
In-stock
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Infineon Technologies | MOSFET N-CH 80V 80A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.7 mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | ||||
VIEW |
1,301
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 28A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 150W (Tc) | N-Channel | Current Sensing | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 69nC @ 10V | 1300pF @ 25V | 10V | ±20V |