Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BUK95180-100A,127
RFQ
VIEW
RFQ
1,534
In-stock
NXP USA Inc. MOSFET N-CH 100V 11A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 100V 11A (Tc) 173 mOhm @ 5A, 10V 2V @ 1mA - 619pF @ 25V 4.5V, 10V ±15V
IRLI540N
RFQ
VIEW
RFQ
2,802
In-stock
Infineon Technologies MOSFET N-CH 100V 23A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 54W (Tc) N-Channel 100V 23A (Tc) 44 mOhm @ 12A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V
IRFBG20
RFQ
VIEW
RFQ
3,131
In-stock
Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 1000V 1.4A (Tc) 11 Ohm @ 840mA, 10V 4V @ 250µA 38nC @ 10V 500pF @ 25V 10V ±20V
IRFBF20
RFQ
VIEW
RFQ
981
In-stock
Vishay Siliconix MOSFET N-CH 900V 1.7A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 900V 1.7A (Tc) 8 Ohm @ 1A, 10V 4V @ 250µA 38nC @ 10V 490pF @ 25V 10V ±20V
IRFBE20
RFQ
VIEW
RFQ
2,588
In-stock
Vishay Siliconix MOSFET N-CH 800V 1.8A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 54W (Tc) N-Channel 800V 1.8A (Tc) 6.5 Ohm @ 1.1A, 10V 4V @ 250µA 38nC @ 10V 530pF @ 25V 10V ±20V