Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,327
In-stock
Infineon Technologies MOSFET N-CHANNEL 30V 50A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 68W (Tc) N-Channel 30V 50A (Tc) 5 mOhm @ 30A, 10V 2.2V @ 250µA 31nC @ 10V 3200pF @ 15V 4.5V, 10V -
IPS050N03LGAKMA1
RFQ
VIEW
RFQ
1,568
In-stock
Infineon Technologies MOSFET N-CH 30V 50A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 68W (Tc) N-Channel 30V 50A (Tc) 5 mOhm @ 30A, 10V 2.2V @ 250µA 31nC @ 10V 3200pF @ 15V 4.5V, 10V ±20V
NTD4805N-35G
RFQ
VIEW
RFQ
1,578
In-stock
ON Semiconductor MOSFET N-CH 30V 12.6A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.41W (Ta), 79W (Tc) N-Channel 30V 12.7A (Ta), 95A (Tc) 5 mOhm @ 30A, 10V 2.5V @ 250µA 48nC @ 11.5V 2865pF @ 12V 4.5V, 11.5V ±20V