- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,174
In-stock
|
NXP USA Inc. | MOSFET N-CH 25V 66A SPT533 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 93W (Tc) | N-Channel | - | 25V | 66A (Tc) | 10.5 mOhm @ 25A, 10V | 2V @ 1mA | 12nC @ 5V | 860pF @ 25V | 5V, 10V | ±20V | ||||
VIEW |
1,168
In-stock
|
STMicroelectronics | MOSFET N-CH 24V 50A I-PAK | STripFET™ III | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 24V | 50A (Tc) | 10.5 mOhm @ 25A, 10V | 1.8V @ 250µA | 24nC @ 10V | 1400pF @ 25V | 5V, 10V | ±20V |