- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,880
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 71W (Tc) | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | ||||
VIEW |
1,985
In-stock
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Infineon Technologies | MOSFET N-CH 30V 43A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V |