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- Power Dissipation (Max) :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,926
In-stock
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Infineon Technologies | MOSFET N CH 60V 173A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 60V | 173A (Tc) | 3.3 mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | 6V, 10V | ±20V | ||||
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852
In-stock
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Infineon Technologies | MOSFET N-CH 75V 76A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
1,797
In-stock
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Infineon Technologies | MOSFET N CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
2,593
In-stock
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Infineon Technologies | MOSFET N-CH 75V 183A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
1,761
In-stock
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Infineon Technologies | MOSFET N CH 60V 110A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
2,194
In-stock
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Infineon Technologies | MOSFET N CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | ||||
VIEW |
1,104
In-stock
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Infineon Technologies | MOSFET N-CH 75V 195A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V |