- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,982
In-stock
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Infineon Technologies | MOSFET N-CH 100V 55A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 55A (Tc) | 26 mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,414
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
3,418
In-stock
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Infineon Technologies | MOSFET N-CH 100V 17A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
1,168
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | |||
