Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCP20N60
RFQ
VIEW
RFQ
3,949
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-220 SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCA20N60-F109
RFQ
VIEW
RFQ
1,626
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-3P SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCA20N60
RFQ
VIEW
RFQ
2,397
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-3P SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V