- Manufacture :
- Series :
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- Mounting Type :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,028
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A I2PAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 70W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,395
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A IPAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,938
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | |||
