Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP11NM60
RFQ
VIEW
RFQ
2,070
In-stock
STMicroelectronics MOSFET N-CH 650V 11A TO-220 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±25V
IRF634B-FP001
RFQ
VIEW
RFQ
1,783
In-stock
ON Semiconductor MOSFET N-CH 250V 8.1A TO-220 - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 74W (Tc) N-Channel 250V 8.1A (Tc) 450 mOhm @ 4.05A, 10V 4V @ 250µA 38nC @ 10V 1000pF @ 25V 10V ±30V