- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,378
In-stock
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Infineon Technologies | MOSFET N-CH 650V 24.3A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 240W (Tc) | N-Channel | - | 650V | 24.3A (Tc) | 160 mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
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VIEW |
2,357
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,553
In-stock
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Infineon Technologies | MOSFET N CH 40V 120A TO220AB | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,636
In-stock
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Infineon Technologies | MOSFET N-CH 650V 24.3A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 240W (Tc) | N-Channel | - | 650V | 24.3A (Tc) | 160 mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | 10V | ±20V |