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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,810
In-stock
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Infineon Technologies | MOSFET N-CH 80V 40A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 35W (Tc) | N-Channel | - | 80V | 40A (Tc) | 10 mOhm @ 40A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
1,137
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A TO220-FP | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 33W (Tc) | N-Channel | - | 100V | 35A (Tc) | 12.6 mOhm @ 35A, 10V | 3.5V @ 45µA | 35nC @ 10V | 2500pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,079
In-stock
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Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V |