- Manufacture :
- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 600V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
3,478
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
800
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,760
In-stock
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STMicroelectronics | MOSFET N-CH 120V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 120V | 40A (Tc) | 32 mOhm @ 20A, 10V | 4V @ 250µA | 80nC @ 10V | 1880pF @ 25V | 10V | ±20V | |||
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VIEW |
1,732
In-stock
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Infineon Technologies | MOSFET P-CH 40V 6.2A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 40V | 6.2A (Ta) | 41 mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,588
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
