Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB60R230P6ATMA1
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2,299
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Infineon Technologies MOSFET N-CH 600V 16.8A 3TO263 CoolMOS™ P6 Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 126W (Tc) N-Channel - 600V 16.8A (Tc) 230 mOhm @ 6.4A, 10V 4.5V @ 530µA 31nC @ 10V 1450pF @ 100V 10V ±20V
SPA06N60C3XKSA1
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1,944
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Infineon Technologies MOSFET N-CH 650V 6.2A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 32W (Tc) N-Channel - 650V 6.2A (Tc) 750 mOhm @ 3.9A, 10V 3.9V @ 260µA 31nC @ 10V 620pF @ 25V 10V ±20V
APT1204R7BFLLG
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1,553
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Microsemi Corporation MOSFET N-CH 1200V 3.5A TO-247 POWER MOS 7® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 135W (Tc) N-Channel - 1200V 3.5A (Tc) 4.7 Ohm @ 1.75A, 10V 5V @ 1mA 31nC @ 10V 715pF @ 25V 10V ±30V
IPP50R299CPXKSA1
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1,221
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Infineon Technologies MOSFET N-CH 550V 12A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 104W (Tc) N-Channel - 550V 12A (Tc) 299 mOhm @ 6.6A, 10V 3.5V @ 440µA 31nC @ 10V 1190pF @ 100V 10V ±20V