- Package / Case :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,420
In-stock
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Infineon Technologies | MOSFET N-CH 500V 7.1A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 66W (Tc) | N-Channel | - | 500V | 7.1A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | 680pF @ 100V | 10V | ±20V | |||
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VIEW |
1,814
In-stock
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Infineon Technologies | MOSFET N-CH 650V 3.2A TO-251 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 38W (Tc) | N-Channel | - | 650V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
945
In-stock
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Infineon Technologies | MOSFET N-CH 650V 57.7A TO220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 480.8W (Tc) | N-Channel | - | 650V | 57.7A (Tc) | 74 mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17nC @ 10V | 3020pF @ 100V | 10V | ±20V | |||
