Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STB4NK60Z-1
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3,028
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STMicroelectronics MOSFET N-CH 600V 4A I2PAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 70W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 26nC @ 10V 510pF @ 25V 10V ±30V
IRFR4615PBF
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3,401
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Infineon Technologies MOSFET N-CH 150V 33A D-PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 26nC @ 10V 1750pF @ 50V 10V ±20V
STD4NK60Z-1
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2,395
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STMicroelectronics MOSFET N-CH 600V 4A IPAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 26nC @ 10V 510pF @ 25V 10V ±30V