Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 40V 240A D2PAK HEXFET®, StrongIRFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D2PAK (7-Lead) 375W (Tc) N-Channel - 40V 240A (Tc) 0.75 mOhm @ 100A, 10V 3.9V @ 250µA 460nC @ 10V 13975pF @ 25V 6V, 10V ±20V
SPA07N60C3XKSA1
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Infineon Technologies MOSFET N-CH 650V 7.3A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 32W (Tc) N-Channel - 650V 7.3A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 250µA 27nC @ 10V 790pF @ 25V 10V ±20V