- Series :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,465
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,692
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 180A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 180A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,045
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 75V | 120A (Tc) | 5.8 mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,591
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,343
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,707
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,217
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,999
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,226
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 300W (Tc) | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,174
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,928
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,145
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,480
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,701
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 160A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | |||
