- Manufacture :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,627
In-stock
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Infineon Technologies | MOSFET N-CH 30V 160A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 135W (Tc) | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,742
In-stock
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GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | - | Not For New Designs | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1700V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | |||
|
VIEW |
3,950
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A D2PAK-7 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 330W (Tc) | N-Channel | - | 40V | 160A (Tc) | 1.6 mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | 6930pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,964
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 75V | 160A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,583
In-stock
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Infineon Technologies | MOSFET N-CH 30V 160A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 195W (Tc) | N-Channel | - | 30V | 160A (Tc) | 1.95 mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | 8020pF @ 25V | 10V | ±20V | |||
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VIEW |
947
In-stock
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Infineon Technologies | MOSFET N-CH 55V 160A D2PAK-7 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V | |||
