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- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,098
In-stock
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Transphorm | MOSFET N-CH 650V 50A TO247 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 178W (Tc) | N-Channel | - | 650V | 50A (Tc) | 41 mOhm @ 32A, 8V | 2.65V @ 700µA | 42nC @ 8V | 2197pF @ 400V | 8V | ±18V | |||
|
VIEW |
2,257
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A D-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | |||
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VIEW |
1,499
In-stock
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ON Semiconductor | MOSFET N-CH 60V 50A TO-220 | QFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 120W (Tc) | N-Channel | - | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | |||
