- Manufacture :
- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,961
In-stock
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Infineon Technologies | MOSFET N-CH 560V 16A TO220FP | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3 | 34W (Tc) | N-Channel | - | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
2,567
In-stock
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Infineon Technologies | MOSFET N-CH 600V 16A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
1,804
In-stock
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Infineon Technologies | MOSFET N-CH 600V 16A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
3,374
In-stock
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ON Semiconductor | MOSFET N-CH 600V 16A TO-220F | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 37.9W (Tc) | N-Channel | - | 600V | 16A (Tc) | 260 mOhm @ 8A, 10V | 5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | 10V | ±30V | |||
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VIEW |
2,528
In-stock
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Infineon Technologies | MOSFET N-CH 100V 16A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
2,830
In-stock
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ON Semiconductor | MOSFET N-CH 500V 16A | QFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 200W (Tc) | N-Channel | - | 500V | 16A (Tc) | 320 mOhm @ 8A, 10V | 5V @ 250µA | 75nC @ 10V | 3000pF @ 25V | 10V | ±30V | |||
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VIEW |
3,117
In-stock
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ON Semiconductor | MOSFET N-CH 600V 16A TO-220 | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 167W (Tc) | N-Channel | - | 600V | 16A (Tc) | 260 mOhm @ 8A, 10V | 5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | 10V | ±30V | |||
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VIEW |
3,075
In-stock
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Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 34W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
1,036
In-stock
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Infineon Technologies | MOSFET N-CH 650V 16A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
3,823
In-stock
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Infineon Technologies | MOSFET N-CH 560V 16A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 160W (Tc) | N-Channel | - | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 10V | ±20V |