- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,810
In-stock
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Infineon Technologies | MOSFET N-CH 80V 40A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 35W (Tc) | N-Channel | - | 80V | 40A (Tc) | 10 mOhm @ 40A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 6V, 10V | ±20V | |||
|
VIEW |
3,664
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 38A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,884
In-stock
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Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
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|
VIEW |
903
In-stock
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Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
