- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,498
In-stock
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Infineon Technologies | MOSFET N-CH 75V 56A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 99W (Tc) | N-Channel | - | 75V | 56A (Tc) | 11.2 mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | 6V, 10V | ±20V | |||
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919
In-stock
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Infineon Technologies | MOSFET N-CH 75V 183A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D²PAK (TO-263AB) | 294W (Tc) | N-Channel | - | 75V | 197A (Tc) | 3.05 mOhm @ 100A, 10V | 3.7V @ 150µA | 270nC @ 10V | 10130pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
895
In-stock
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ON Semiconductor | MOSFET N-CH 75V 80A TO-220AB-3 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 310W (Tc) | N-Channel | - | 75V | - | - | - | - | - | 6V, 10V | ±20V | |||
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VIEW |
852
In-stock
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Infineon Technologies | MOSFET N-CH 75V 76A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,212
In-stock
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Infineon Technologies | MOSFET N-CH 75V 240A D2PAK | StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 375W (Tc) | N-Channel | - | 75V | 240A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 428nC @ 10V | 13970pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,593
In-stock
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Infineon Technologies | MOSFET N-CH 75V 183A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 290W (Tc) | N-Channel | - | 75V | 183A (Tc) | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,104
In-stock
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Infineon Technologies | MOSFET N-CH 75V 195A D2PAK | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 375W (Tc) | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,229
In-stock
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ON Semiconductor | MOSFET N-CH 75V 80A TO-220AB | PowerTrench® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 310W (Tc) | N-Channel | - | 75V | 15A (Tc) | 4.7 mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | 6600pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,430
In-stock
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Infineon Technologies | MOSFET N-CH 75V 89A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 75V | 87A (Tc) | 7.2 mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | 6V, 10V | ±20V |