Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF644B-FP001
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2,462
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ON Semiconductor MOSFET N-CH 250V 14A TO-220 - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 139W (Tc) N-Channel - 250V 14A (Tc) 280 mOhm @ 7A, 10V 4V @ 250µA 60nC @ 10V 1600pF @ 25V 10V ±30V
IRFR48ZPBF
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2,449
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Infineon Technologies MOSFET N-CH 55V 42A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 91W (Tc) N-Channel - 55V 42A (Tc) 11 mOhm @ 37A, 10V 4V @ 50µA 60nC @ 10V 1720pF @ 25V 10V ±20V
SPA11N60C3XKSA1
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3,182
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Infineon Technologies MOSFET N-CH 600V 11A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 33W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
SPP11N60C3XKSA1
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RFQ
2,157
In-stock
Infineon Technologies MOSFET N-CH 650V 11A TO-220AB CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V