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- Current - Continuous Drain (Id) @ 25°C :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,968
In-stock
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Infineon Technologies | MOSFET N-CH 30V 140A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 30V | 140A (Tc) | 5.5 mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | |||
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1,450
In-stock
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Infineon Technologies | MOSFET N-CH 30V 7.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 30V | 7.3A (Tc) | 30 mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | 550pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,198
In-stock
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Infineon Technologies | MOSFET N-CH 30V 10A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 10A (Ta) | 13.5 mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,125
In-stock
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Infineon Technologies | MOSFET N-CH 30V 13.6A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.6A (Ta) | 9.1 mOhm @ 13A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1010pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,968
In-stock
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Infineon Technologies | MOSFET N-CH 30V 65A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
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605
In-stock
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STMicroelectronics | MOSFET N-CH 30V 70A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | - | 30V | 70A (Tc) | 9.5 mOhm @ 35A, 10V | 1V @ 250µA | 30nC @ 5V | 1440pF @ 25V | 5V, 10V | ±18V | |||
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VIEW |
706
In-stock
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Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 4.5V, 10V | ±16V |