Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFS7787PBF
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VIEW
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852
In-stock
Infineon Technologies MOSFET N-CH 75V 76A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel - 75V 76A (Tc) 8.4 mOhm @ 46A, 10V 3.7V @ 100µA 109nC @ 10V 4020pF @ 25V 6V, 10V ±20V
SPP11N60C3XKSA1
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VIEW
RFQ
2,157
In-stock
Infineon Technologies MOSFET N-CH 650V 11A TO-220AB CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 650V 11A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 60nC @ 10V 1200pF @ 25V 10V ±20V
FCP11N60
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2,641
In-stock
ON Semiconductor MOSFET N-CH 600V 11A TO-220 SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 125W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 52nC @ 10V 1490pF @ 25V 10V ±30V
TPH3205WSB
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VIEW
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3,472
In-stock
Transphorm MOSFET N-CH 650V 36A TO247 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 125W (Tc) N-Channel - 650V 36A (Tc) 60 mOhm @ 22A, 8V 2.6V @ 700µA 42nC @ 8V 2200pF @ 400V 8V ±18V
IPP70N10S312AKSA1
RFQ
VIEW
RFQ
611
In-stock
Infineon Technologies MOSFET N-CH 100V 70A TO220-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 100V 70A (Tc) 11.6 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V