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- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,960
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Infineon Technologies | MOSFET N-CH 30V 75A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 30V | 75A (Tc) | 3.3 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 5730pF @ 25V | 10V | ±20V | |||
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1,324
In-stock
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Infineon Technologies | MOSFET N-CH 55V 135A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 135A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | |||
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3,692
In-stock
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Infineon Technologies | MOSFET N-CH 40V 180A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 180A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
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676
In-stock
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Infineon Technologies | MOSFET N-CH 55V 131A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 131A (Tc) | 5.3 mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | 10V | ±20V | |||
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2,830
In-stock
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ON Semiconductor | MOSFET N-CH 500V 16A | QFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 200W (Tc) | N-Channel | - | 500V | 16A (Tc) | 320 mOhm @ 8A, 10V | 5V @ 250µA | 75nC @ 10V | 3000pF @ 25V | 10V | ±30V | |||
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3,487
In-stock
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Infineon Technologies | MOSFET N-CH 40V 170A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 40V | 170A (Tc) | 3.6 mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | 5890pF @ 25V | 10V | ±20V | |||
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2,999
In-stock
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Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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1,703
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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955
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
