Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP11NM60
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2,070
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STMicroelectronics MOSFET N-CH 650V 11A TO-220 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±25V
IRFS7540PBF
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RFQ
1,761
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Infineon Technologies MOSFET N CH 60V 110A D2PAK HEXFET®, StrongIRFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 160W (Tc) N-Channel - 60V 110A (Tc) 5.1 mOhm @ 65A, 10V 3.7V @ 100µA 130nC @ 10V 4555pF @ 25V 6V, 10V ±20V
SPW16N50C3FKSA1
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RFQ
3,823
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Infineon Technologies MOSFET N-CH 560V 16A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 160W (Tc) N-Channel - 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 10V ±20V
STW15NK50Z
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RFQ
3,297
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-247 SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 160W (Tc) N-Channel - 500V 14A (Tc) 340 mOhm @ 7A, 10V 4.5V @ 100µA 106nC @ 10V 2260pF @ 25V 10V ±30V