Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STD3NK60Z-1
RFQ
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RFQ
2,019
In-stock
STMicroelectronics MOSFET N-CH 600V 2.4A IPAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8nC @ 10V 311pF @ 25V 10V ±30V
STP4NK50ZD
RFQ
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RFQ
3,029
In-stock
STMicroelectronics MOSFET N-CH 500V 3A TO-220 SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 500V 3A (Tc) 2.7 Ohm @ 1.5A, 10V 4.5V @ 50µA 12nC @ 10V 310pF @ 25V 10V ±30V
STP3NK60Z
RFQ
VIEW
RFQ
3,199
In-stock
STMicroelectronics MOSFET N-CH 600V 2.4A TO-220 SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8nC @ 10V 311pF @ 25V 10V ±30V
IRFR024NPBF
RFQ
VIEW
RFQ
1,700
In-stock
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 75 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V
IRLR024NPBF
RFQ
VIEW
RFQ
1,446
In-stock
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V