- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,070
In-stock
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STMicroelectronics | MOSFET N-CH 650V 11A TO-220 | MDmesh™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | 160W (Tc) | N-Channel | - | 650V | 11A (Tc) | 450 mOhm @ 5.5A, 10V | 5V @ 250µA | 30nC @ 10V | 1000pF @ 25V | 10V | ±25V | |||
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VIEW |
2,157
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-220AB | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,217
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | 96W (Tc) | N-Channel | - | 650V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
2,641
In-stock
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ON Semiconductor | MOSFET N-CH 600V 11A TO-220 | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 125W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | 10V | ±30V |