- Operating Temperature :
- Mounting Type :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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844
In-stock
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Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
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3,259
In-stock
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Infineon Technologies | MOSFET N-CH 150V 51A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 230W (Tc) | N-Channel | - | 150V | 51A (Tc) | 32 mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | 10V | ±30V | |||
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1,216
In-stock
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Infineon Technologies | MOSFET N-CH 150V 195A D2-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 150V | 195A (Tc) | 12.1 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
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VIEW |
3,795
In-stock
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Infineon Technologies | MOSFET N-CH 250V 45A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 250V | 45A (Tc) | 48 mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | 4560pF @ 25V | 10V | ±30V | |||
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2,642
In-stock
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Infineon Technologies | MOSFET N-CH 150V 24A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 150V | 24A (Tc) | 95 mOhm @ 14A, 10V | 5V @ 250µA | 45nC @ 10V | 890pF @ 25V | 10V | ±30V | |||
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2,599
In-stock
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Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.8W (Ta) | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | |||
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2,550
In-stock
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Infineon Technologies | MOSFET N-CH 150V 104A TO220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 380W (Tc) | N-Channel | - | 150V | 104A (Tc) | 11 mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
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VIEW |
3,458
In-stock
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Infineon Technologies | MOSFET N-CH 200V 72A D2-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V | |||
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VIEW |
3,300
In-stock
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Infineon Technologies | MOSFET N-CH 200V 62A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 330W (Tc) | N-Channel | - | 200V | 62A (Tc) | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
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VIEW |
2,293
In-stock
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Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 350W (Tc) | N-Channel | - | 150V | 85A (Tc) | 15 mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | 10V | ±30V | |||
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VIEW |
1,912
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V |