- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.95 mOhm @ 148A, 10V (1)
- 110 mOhm @ 9.6A, 10V (1)
- 117 mOhm @ 14A, 10V (1)
- 15 mOhm @ 5.6A, 10V (1)
- 160 mOhm @ 1.9A, 10V (1)
- 170 mOhm @ 1.5A, 10V (1)
- 175 mOhm @ 6.6A, 10V (1)
- 18 mOhm @ 8.3A, 10V (1)
- 185 mOhm @ 1.6A, 10V (1)
- 20 mOhm @ 42A, 10V (1)
- 200 mOhm @ 1.6A, 10V (1)
- 205 mOhm @ 7.8A, 10V (1)
- 22 mOhm @ 4.4A, 10V (1)
- 240 mOhm @ 1.3A, 10V (1)
- 26 mOhm @ 4.1A, 10V (1)
- 39 mOhm @ 3.2A, 10V (1)
- 480 mOhm @ 3.9A, 10V (1)
- 60 mOhm @ 2.7A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 9.4 mOhm @ 12A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1280pF @ 25V (1)
- 1450pF @ 25V (1)
- 1510pF @ 25V (1)
- 1530pF @ 25V (1)
- 1560pF @ 25V (1)
- 1640pF @ 25V (1)
- 1720pF @ 25V (1)
- 190pF @ 25V (1)
- 2780pF @ 25V (1)
- 3180pF @ 25V (1)
- 330pF @ 25V (1)
- 3500pF @ 25V (1)
- 350pF @ 25V (2)
- 420pF @ 25V (1)
- 650pF @ 25V (1)
- 760pF @ 25V (1)
- 8020pF @ 25V (1)
- 930pF @ 25V (1)
- 940pF @ 25V (1)
- Applied Filters :
20 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
844
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,877
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.4A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 5.4A (Ta) | 39 mOhm @ 3.2A, 10V | 4V @ 250µA | 56nC @ 10V | 1720pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,281
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 6.9A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 6.9A (Ta) | 26 mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61nC @ 10V | 3180pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,201
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,695
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,856
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,591
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,861
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 38A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 170W (Tc) | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,583
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 160A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 195W (Tc) | N-Channel | - | 30V | 160A (Tc) | 1.95 mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | 8020pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,543
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,884
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,336
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,157
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 18A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,599
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 2.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.8W (Ta) | N-Channel | - | 150V | 2.6A (Ta) | 185 mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | 420pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,469
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,493
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,712
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,562
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 110W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
837
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 7.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 7.3A (Ta) | 22 mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | 1530pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,249
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | |||
