- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,541
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.2A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 151W (Tc) | N-Channel | - | 650V | 20.2A (Tc) | 190 mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | 10V | ±20V | |||
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VIEW |
1,762
In-stock
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Infineon Technologies | MOSFET N-CH 600V 20.2A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 10V | ±20V | |||
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3,478
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
800
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
3,201
In-stock
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Infineon Technologies | MOSFET N-CH 560V 21A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,140
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22.4A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 195.3W (Tc) | N-Channel | - | 650V | 22.4A (Tc) | 150 mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | 10V | ±20V | |||
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VIEW |
2,567
In-stock
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Infineon Technologies | MOSFET N-CH 600V 16A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
1,295
In-stock
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Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
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VIEW |
2,294
In-stock
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Infineon Technologies | MOSFET N-CH 650V 21A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 192W (Tc) | N-Channel | - | 650V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
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VIEW |
3,230
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
1,163
In-stock
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Infineon Technologies | MOSFET N-CH 600V 7.3A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | |||
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VIEW |
1,347
In-stock
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Infineon Technologies | MOSFET N-CH 650V 25A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 208W (Tc) | N-Channel | - | 650V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V |