- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,276
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,365
In-stock
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Infineon Technologies | MOSFET N-CH 100V 70A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 100V | 70A (Tc) | 16 mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,680
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
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VIEW |
2,357
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,009
In-stock
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Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | |||
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VIEW |
894
In-stock
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Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 188W (Tc) | N-Channel | - | 40V | 80A (Tc) | 3.5 mOhm @ 80A, 10V | 4V @ 120µA | 110nC @ 10V | 7300pF @ 25V | 10V | ±20V |