- Series :
- Mounting Type :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,814
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 3.2A TO-251 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 38W (Tc) | N-Channel | - | 650V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,619
In-stock
|
Infineon Technologies | MOSFET N-CH 650V TO-251-3 | CoolMOS™ E6 | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
1,486
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 3.1A TO-251 | CoolMOS™ CE | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 42W (Tc) | N-Channel | - | 500V | 3.1A (Tc) | 1.4 Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2nC @ 10V | 178pF @ 100V | 13V | ±20V | |||
|
|
VIEW |
3,348
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 1.8A IPAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,358
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 7.3A TO-251 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 83W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,434
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 4.5A TO-251 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 50W (Tc) | N-Channel | - | 650V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
