- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
18 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,561
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
3,321
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
1,160
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
2,410
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
1,814
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
1,120
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
2,043
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
3,733
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
3,422
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||||
VIEW |
2,327
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
2,698
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
706
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
2,839
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | ||||
VIEW |
984
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
3,930
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 89A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | ||||
VIEW |
1,398
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 75A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 75V | 75A (Tc) | 9.4 mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | 10V | ±20V | ||||
VIEW |
3,229
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||||
VIEW |
1,249
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V |