Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF450
RFQ
VIEW
RFQ
750
In-stock
Infineon Technologies MOSFET N-CH 500V 12A TO-3-3 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA (TO-3) 150W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 12A, 10V 4V @ 250µA 120nC @ 10V 2700pF @ 25V 10V ±20V
IRF640NL
RFQ
VIEW
RFQ
1,294
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,301
In-stock
Vishay Siliconix MOSFET N-CH 100V 28A TO-220-5 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-5 TO-220-5 150W (Tc) N-Channel Current Sensing 100V 28A (Tc) 77 mOhm @ 17A, 10V 4V @ 250µA 69nC @ 10V 1300pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,977
In-stock
Vishay Siliconix MOSFET N-CH 60V 50A TO-220-5 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-5 TO-220-5 150W (Tc) N-Channel Current Sensing 60V 50A (Tc) 28 mOhm @ 31A, 10V 4V @ 250µA 95nC @ 10V 2500pF @ 25V 10V ±20V
IRFZ48VS
RFQ
VIEW
RFQ
602
In-stock
Infineon Technologies MOSFET N-CH 60V 72A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRF640NSPBF
RFQ
VIEW
RFQ
2,877
In-stock
Infineon Technologies MOSFET N-CH 200V 18A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
64-0007
RFQ
VIEW
RFQ
2,643
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
IRFZ48VPBF
RFQ
VIEW
RFQ
3,933
In-stock
Infineon Technologies MOSFET N-CH 60V 72A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRF640NLPBF
RFQ
VIEW
RFQ
3,338
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V
IRF640NPBF
RFQ
VIEW
RFQ
1,744
In-stock
Infineon Technologies MOSFET N-CH 200V 18A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 200V 18A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 67nC @ 10V 1160pF @ 25V 10V ±20V