- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,440
In-stock
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GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | - | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
|
VIEW |
2,630
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
2,045
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 14A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 108W (Tc) | N-Channel | 1200V | 14A (Tc) | 364 mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | 18V | +22V, -6V | |||
|
VIEW |
1,554
In-stock
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STMicroelectronics | MOSFET N-CH 300V 42A TO247 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 300W (Tc) | N-Channel | 300V | 42A (Tc) | 75 mOhm @ 17A, 10V | 4V @ 250µA | 90nC @ 10V | 3200pF @ 25V | 10V | ±20V | |||
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|
VIEW |
690
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | |||
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VIEW |
1,872
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | |||
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|
VIEW |
1,775
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V | |||
