Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 60V 195A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V
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Infineon Technologies MOSFET N-CH 100V 180A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 370W (Tc) N-Channel - 100V 180A (Tc) 4.3 mOhm @ 110A, 10V 2.5V @ 250µA 130nC @ 4.5V 11360pF @ 50V 4.5V, 10V ±16V
IRLB3034PBF
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Infineon Technologies MOSFET N-CH 40V 195A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 40V 195A (Tc) 1.7 mOhm @ 195A, 10V 2.5V @ 250µA 162nC @ 4.5V 10315pF @ 25V 4.5V, 10V ±20V
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Infineon Technologies MOSFET N-CH 30V 260A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 30V 260A (Tc) 3 mOhm @ 38A, 10V 2.5V @ 250µA 110nC @ 4.5V 5890pF @ 15V 4.5V, 10V ±20V
IRLB3036PBF
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Infineon Technologies MOSFET N-CH 60V 195A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V